RF Analysis of Double-Gate Junctionless Tunnel FET for Wireless Communication Systems: A Non-quasi Static Approach

Abstract

The optimum and acceptable combination of control gate (CG) process parameters, such as dielectric materials, thickness, and metal work function for a double-gate junctionless tunnel field-effect transistor, remain a subject of great interest among researchers. We report here on the significant impact of CG process variations on the radio-frequency (RF) parameters of this device structure. Studies carried out using a non-quasi-static model with CG process variations have been analyzed for current gain (h21) and unilateral power gain with the help of a Silvaco Atlas device simulator. Systematic investigations reveal that the combination of CG process parameters, such as dielectric material (SiO2) with the thickness of 2 nm and CG metal (aluminum-?100?), provide the optimum RF characteristics, i.e., fT (2.9 GHz) and fmax (15 GHz), while maintaining the switching ratio (0.161 � 109), intrinsic capacitances (Cgg = 0.7 fF), and transconductance (3.8 ?S) at the bias conditions of Vgs (1 V) and Vds (1 V). The results have been thoroughly interpreted from energy band diagrams and the associated band-to-band tunneling rate. The studies reported here may prove to be useful for further exploring the use of the suggested device structure for Internet of Everything communications and other related applications.