Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1980
Title: Device Simulation of Poly (3-Hexylthiophene) HTL Based Single and Double Halide Perovskite Solar Cells
Authors: Sharma S
Gohri S
Pandey R
Madan J
Sharma R.
Keywords: Perovskite Solar cells
Wide Bandgap Halide
Narrow Bandgap Halide
Single Halide Device
Double Halide Device
Electron Transport Layer and Hole Transport Layer
Issue Date: 2020
Publisher: Institute of Electrical and Electronics Engineers Inc.
Abstract: The materials used to fabricate solar cell, affect the efficiency of the solar cell significantly. In recent times lead halide perovskite has become one of the emerging material due to its excellent optical properties like high absorption coefficient and high tolerance to defects. Perovskite solar cells (PSCs) consist of active (absorber) layer sandwiched between ETL (electron transport layer) and HTL (hole transport layer). ETL and HTL play an essential role in PSC. In this work, two devices namely, single halide device (SHD) and double halide device (DHD) using poly (3-hexylthiophene) (P3HT) (HTL) and TiO 2 (ETL) are simulated. In the case of SHD, a narrow bandgap halide (NBH) has been utilized as an absorber layer which is further sandwiched between P3HT and TiO 2 . While in the case of DHD, a thin layer of wide bandgap halide (WBH) has been deployed on the top of NBH sandwiched between ETL and HTL. After performing comparative analysis, it has been realized that SHD provides 15% efficiency with 0.88V open-circuit voltage (V OC ), while DHD reports 21% conversion efficiency with 1.13V V OC . The findings can be carried forward for further research work like lead-free perovskite solar cell and tandem approach.
URI: 10.1109/PVSC45281.2020.9300485
http://hdl.handle.net/123456789/1980
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